1、

Oxygen ECR/ RP plasma etches diamond successfully with an etch rate up to 8 μ m/ h. The etch rate and surface morphology are influenced by biasing frequency and self biasing voltage.

在射频偏压辅助下,氧等离子体成功地对金刚石膜进行了刻蚀,刻蚀速率最高可达8μm/h,偏压频率和直流自偏压大小均会影响刻蚀速率和刻蚀表面形貌。

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2、
3、

Higher self biasing voltage increases ion bombardment energy and densities of oxygen atoms/ ions, which is a key factor for etching.

基底直流自偏压的提高能增强离子轰击效应和增加氧原子/氧离子密度,因而是决定刻蚀速率的一个关键因素。

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4、

Effect of Substrate Biasing Voltage on the Composition of the Surfacial Film

衬底偏压对膜表面层成分的影响

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5、

The real-time image differentiating is performed with the nonlinear transforming ability of LCLV only by changing its biasing voltage.

仅简单地通过调整液晶光闪的工作电压,使其处于非线性变换态即可完成对图像的实时微分运算。

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6、

It is known from the experiment that, by using external biasing voltage, the separation of photoelectrons from vacancies can be effectively promoted and the degradation efficiency is further improved.

通过实验可知,使用外加偏电压可以有效地促进光生电子和空穴的分离,进一步提高降解效率。

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8、

The DC biasing current has been calculated in detail, which will go through the converter transformer winding in BTB DC system due to unbalance firing and the second harmonic voltage of positive sequence on the AC converter bus.

根据背靠背直流系统的技术特点,详细计算了由于触发不平衡和交流系统正序二次谐波在换流变压器中产生的直流偏磁电流。

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9、

PPF can suppress switch's drop-out peak-voltage and magnetic biasing by adding a clamping capacitor on primary side of the traditional push-pull converter's transformer.

通过在传统推挽电路的变压器原边增加箝位电容,抑制了开关管电压尖峰和电路的偏磁。

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10、

A constant gm biasing circuit is used to maintain a relative constant gain over process, voltage and temperature variations.

恒定跨导偏置电路的使用减小了低噪声放大器的增益随工艺、电压、温度变化的偏差。

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